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1.5V Drive Nch MOSFET
RW1C015UN
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
WEMT6
(6)
(5)
(4)
Features 1) Low On-resistance. 2) High power package. Low voltage drive. (1.5V)
(1)
(2)
(3)
Abbreviated symbol : PS
Applications Switching
Packaging specifications
Package Type Code Basic ordering unit (pieces) RW1C015UN Taping T2R 8000
Inner circuit
(6) (5) (4)
2
1
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg Limits 20 10 1.5 3 0.5 3 0.7 150 -55 to +150 Unit V V A A A A W C C
(1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE
(1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain
Total power dissipation Channel temperature Range of Storage temperature
1 Pw10s, Duty cycle1% 2 When mounted on a ceramic board
Thermal resistance
Parameter Channel to ambient
When mounted on a ceramic board
Symbol Rth (ch-a)
Limits 179
Unit C / W
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1/4
2009.05 - Rev.A
RW1C015UN
Electrical characteristics (Ta=25C)
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Data Sheet
RDS (on)
Yfs Ciss Coss Crss td (on)
tr td (off) tf Qg Qgs Qgd

Min. - 20 - 0.3 - - - - 1.6 - - - - - - - - - -
Typ. - - - - 130 170 220 300 - 110 18 15 5 5 20 3 1.8 0.3 0.3
Max. 10 - 1 1.0 180 240 310 600 - - - - - - - - - - -
Unit A V A V m m m m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS= 10V, VDS=0V ID= 1mA, VGS=0V VDS= 20V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 2.5V ID= 0.8A, VGS= 1.8V ID= 0.3A, VGS= 1.5V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz VDD 10V ID= 1A VGS= 4.5V RL 10 RG=10 VDD 10V ID= 1.5A VGS= 4.5V RL 6.7 RG=10
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. 1.2
Unit V
Conditions IS= 1.5A, VGS=0V
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c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.05 - Rev.A
RW1C015UN
Electrical characteristics curves
1.5 DRAIN CURRENT : ID [A] VGS= 10V VGS= 4.5V VGS= 2.5V Ta=25C Pulsed DRAIN CURRENT : ID [A] 1.5 VGS= 4.5V VGS= 1.8V VGS= 1.5V 1 Ta=25C Pulsed DRAIN CURRENT : ID [A] 10 VDS= 10V Pulsed Ta= 125C Ta= 75C 0.1 Ta= 25C Ta= - 25C
Data Sheet
1
1 VGS= 1.8V
VGS= 1.5V
0.5
VGS= 1.3V
0.5 VGS= 1.1V
VGS= 1.3V
0.01
VGS= 1.2V 0 0 0.2 0.4 0.6 0.8 1 0 0 2 4 6 8 10 0.001 0 0.5 1 1.5 2
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics()
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics()
GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics
10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
Ta= 25C Pulsed
10000 VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V
VGS= 4.5V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C
10000
VGS= 2.5V Pulsed
1000
1000
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
100
100
100
10 0.01
0.1
1
10
10 0.01
0.1
1
10
10 0.01
0.1
1
10
DRAIN-CURRENT : ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current()
10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
VGS= 1.8V Pulsed
10000 Ta=125C Ta=75C Ta=25C Ta= -25C
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
VGS= 1.5V Pulsed
10
1000
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
VDS= 10V Pulsed
1 Ta= -25C Ta=25C Ta=75C Ta=125C
100
100
10 0.01
0.1
1
10
10 0.01
0.1
1
10
0.1 0.01
0.1
1
10
DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current
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3/4
2009.05 - Rev.A
RW1C015UN
10 REVERSE DRAIN CURRENT : Is [A] VGS=0V Pulsed 600 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] 500 ID = 0.8A 400 ID = 1.5A 300 200 100 tr 0 0 0.5 1 1.5 0 2 4 6 8 10 1 0.01 0.1 1 Ta=25C Pulsed SWITCHING TIME : t [ns] 1000
Data Sheet
Ta=25C VDD = 10V VGS=4.5V RG=10 Pulsed
td(off) 100 tf
1
0.1
Ta=125C Ta=75C Ta=25C Ta=-25C
10
td(on)
0.01
10
SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage
DRAIN-CURRENT : ID [A] Fig.12 Switching Characteristics
5 GATE-SOURCE VOLTAGE : VGS [V]
1000
CAPACITANCE : C [pF]
4
Ta=25C f=1MHz VGS=0V Ciss
3
100 Coss Crss
2 Ta=25C VDD = 10V ID = 1.5A RG=10 Pulsed 0 0.5 1 1.5 2
1
0
10 0.01 0.1 1 10 100
TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage
Measurement circuit
Pulse Width
VGS
ID
VDS
VGS 50% 10% 10%
90%
50% 10%
RL D.U.T. RG VDD
VDS
90% td(on) ton tr td(off) toff
90% tr
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
VG
VGS ID VDS RL IG (Const.) RG D.U.T. VDD
Qg VGS Qgs Qgd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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4/4
2009.05 - Rev.A
Notice
Notes
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